Novel digital photosensor cell in GaAs IC using conversion of light intensity to pulse frequency

Novel digital photosensor cell in GaAs IC using conversion of light intensity to pulse frequency

A photoelectric GaAs integrated circuit that converts light intensity to digital signal frequency has been fabricated using the GaAs MES-FET process. The circuit includes a metal-semiconductor-metal photodiode (MSM-PD), a preamplifier (PA), a Schmitt trigger (ST), a flip-flop (FF) (1-bit digital cou...

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Veröffentlicht in:Japanese Journal of Applied Physics 1993-11, Vol.32 (11A), p.5002-5007
Hauptverfasser: TANAKA, K, ANDO, F, TAKETOSHI, K, OHISHI, I, ASARI, G
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:A photoelectric GaAs integrated circuit that converts light intensity to digital signal frequency has been fabricated using the GaAs MES-FET process. The circuit includes a metal-semiconductor-metal photodiode (MSM-PD), a preamplifier (PA), a Schmitt trigger (ST), a flip-flop (FF) (1-bit digital counter) and a reset (R st ) FET. This sensor cell has a wide dynamic range of over 5 decades of incident light power and a ? characteristic suitable for an image pickup device.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.32.5002