Anisotropic ridge growth by step-flow-mode metalorganic chemical vapor deposition using diethylgalliumchloride

In selective metalorganic chemical vapor deposition, ridge growth of GaAs was investigated with respect to step-flow-mode growth using diethylgalliumchloride. Although the flat surface of selective epilayers was easy to obtain due to the reevaporation-enhancement effect, anisotropic ridged layers we...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-11, Vol.32 (11A), p.4885-4888
Hauptverfasser:	YAMAGUCHI, K.-I, OKAMOTO, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics Vapor phase epitaxy growth from vapor phase
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Zusammenfassung:	In selective metalorganic chemical vapor deposition, ridge growth of GaAs was investigated with respect to step-flow-mode growth using diethylgalliumchloride. Although the flat surface of selective epilayers was easy to obtain due to the reevaporation-enhancement effect, anisotropic ridged layers were also observed. The growth form of the ridged layers depended upon crystal orientation of striped mask patterns, off-angle of vicinal (100) substrates and step-flow velocity. Step-flow velocity in the [011] direction was 1.6 times higher than that in the [01?1] direction; as a result, long ridged layers were formed along the [011] direction.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.32.4885