Electrode temperature effect in narrow-gap reactive ion etching

The SiO 2 etch characteristics were investigated using a narrow-gap reactive ion etching (RIE) apparatus. The etch rate was decreased and the selectivity to Si was increased when the upper electrode temperature was increased. However, the etch characteristics were independent of the absolute tempera...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-10, Vol.32 (10), p.4850-4853
Hauptverfasser:	TSUKADA, T, MASHIRO, S, MASHIMO, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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