Electrode temperature effect in narrow-gap reactive ion etching
The SiO 2 etch characteristics were investigated using a narrow-gap reactive ion etching (RIE) apparatus. The etch rate was decreased and the selectivity to Si was increased when the upper electrode temperature was increased. However, the etch characteristics were independent of the absolute tempera...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1993-10, Vol.32 (10), p.4850-4853 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The SiO
2
etch characteristics were investigated using a narrow-gap reactive ion etching (RIE) apparatus. The etch rate was decreased and the selectivity to Si was increased when the upper electrode temperature was increased. However, the etch characteristics were independent of the absolute temperatures of the electrodes. This phenomenon can be explained in terms of the difference in the polymer deposition rate on walls that have different temperatures. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.32.4850 |