Electrode temperature effect in narrow-gap reactive ion etching

Electrode temperature effect in narrow-gap reactive ion etching

The SiO 2 etch characteristics were investigated using a narrow-gap reactive ion etching (RIE) apparatus. The etch rate was decreased and the selectivity to Si was increased when the upper electrode temperature was increased. However, the etch characteristics were independent of the absolute tempera...

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Veröffentlicht in:Japanese Journal of Applied Physics 1993-10, Vol.32 (10), p.4850-4853
Hauptverfasser: TSUKADA, T, MASHIRO, S, MASHIMO, K
Format: Artikel
Sprache:eng
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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container_title Japanese Journal of Applied Physics
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creator TSUKADA, T
MASHIRO, S
MASHIMO, K
description The SiO 2 etch characteristics were investigated using a narrow-gap reactive ion etching (RIE) apparatus. The etch rate was decreased and the selectivity to Si was increased when the upper electrode temperature was increased. However, the etch characteristics were independent of the absolute temperatures of the electrodes. This phenomenon can be explained in terms of the difference in the polymer deposition rate on walls that have different temperatures.
doi_str_mv 10.1143/jjap.32.4850
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title Electrode temperature effect in narrow-gap reactive ion etching
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