Micro-Patterning of PbZr x Ti 1-x O 3 Thin Films Prepared by Photo Sensitive Sol-Gel Solution

The photo sensitivity of sol-gel solution of PbZr x Ti 1- x O 3 (PZT) was studied. A coated film of the sol-gel solution on Pt/Ti/SiO 2 /Si substrates was exposed to an excimer laser and developed with water. The film was finally annealed at 700°C for 60 s by rapid thermal annealing (RTA). Ferroelec...

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Veröffentlicht in:Japanese Journal of Applied Physics 1993-09, Vol.32 (9S), p.4141
Hauptverfasser: Nakao, Yuichi, Nakamura, Takashi, Hoshiba, Kazuhiro, Sameshima, Katsumi, Kamisawa, Akira, Kohji Abe, Kohji Abe, Nobuyuki Soyama, Nobuyuki Soyama, Katsumi Ogi, Katsumi Ogi
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Sprache:eng
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Zusammenfassung:The photo sensitivity of sol-gel solution of PbZr x Ti 1- x O 3 (PZT) was studied. A coated film of the sol-gel solution on Pt/Ti/SiO 2 /Si substrates was exposed to an excimer laser and developed with water. The film was finally annealed at 700°C for 60 s by rapid thermal annealing (RTA). Ferroelectric perovskite phase was observed in the PZT thin films. The 130-nm-thick film showed P r of 11.2 µ C/cm 2 and E c of 93.8 kV/cm. From this process, half-micron patterns of PZT films were obtained.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.4141