Characterization of Sb atomic-layer-doped Si(100) crystal by X-ray standing wave method

We applied the X-ray standing wave method to the determination of the Sb position in atomic-layer-doped Si crystal. From the fitting of the calculated with the experimental results, an extension of 0.03 and a coherent ratio of 86% were obtained.

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Bibliographische Detailangaben
Veröffentlicht in:	Japanese Journal of Applied Physics 1993-04, Vol.32 (4), p.1772-1774
Hauptverfasser:	IZUMI, K, SAITO, A, KIKUTA, S, XIAO WEI ZHANG
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Physics Structure of solids and liquids crystallography
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Beschreibung
Zusammenfassung:	We applied the X-ray standing wave method to the determination of the Sb position in atomic-layer-doped Si crystal. From the fitting of the calculated with the experimental results, an extension of 0.03 and a coherent ratio of 86% were obtained.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.32.1772