Gamma induced centres in liquid phase epitaxial gallium arsenide

Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for hi...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993, Vol.32 (1A), p.166-167
Hauptverfasser:	ALEXIEV, D, TANSLEY, T. L, BUTCHER, K. S. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
Online-Zugang:	Volltext
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Zusammenfassung:	Poole-Frenkel pairs in liquid phase epitaxial Gallium Arsenide induced by gamma irradiation are described. These defects are shown to be easily annealed out, with the device metallisation intact, at 200°C. Preliminary investigations indicate the usefulness of Liquid Phase Epitaxial (LPE) GaAs for high energy particle detection.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.32.166