Lateral supply mechanisms in selective metalorganic chemical vapor deposition

Selective epitaxial growth of GaAs was carried out by atmospheric-pressure metalorganic chemical vapor deposition, and lateral supply mechanisms of reactant species from mask areas to window areas were investigated. Since reactant species arriving on SiO 2 surfaces were easily reevaporated, deviation from mass balance was observed. In the case of a SiO 2 mask with width of more than 20 µm, lateral vapor-phase diffusion dominated over increment of selective epilayers because of short surface-diffusion length on SiO 2 surfaces (