A Low-Threshold 1.3 µm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser

The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 µm in diameter and 1.2 µm in depth was realized with good reproduclbility. Low-threshold ( I th =52 mA) lasing operat...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1993-03, Vol.32 (3R), p.1126
Hauptverfasser:	Baba, Toshihiko, Matsuoka, Kazuyoshi, Fumio Koyama, Fumio Koyama, Kenichi Iga, Kenichi Iga
Format:	Artikel
Sprache:	eng ; jpn
Online-Zugang:	Volltext
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