A Low-Threshold 1.3 µm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser

A Low-Threshold 1.3 µm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser

The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 µm in diameter and 1.2 µm in depth was realized with good reproduclbility. Low-threshold ( I th =52 mA) lasing operat...

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Veröffentlicht in:Japanese Journal of Applied Physics 1993-03, Vol.32 (3R), p.1126
Hauptverfasser: Baba, Toshihiko, Matsuoka, Kazuyoshi, Fumio Koyama, Fumio Koyama, Kenichi Iga, Kenichi Iga
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 µm in diameter and 1.2 µm in depth was realized with good reproduclbility. Low-threshold ( I th =52 mA) lasing operation of a 1.3-µm-range FCBH surface emitting laser with a pair of dielectric micromirrors was achieved in a pulsed condition at 0°C.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.1126