InP/InAlAs resonant tunneling diodes grown by gas source molecular beam epitaxy

An InP/InAlAs double-barrier resonant tunneling diode (DB-RTD) is grown by gas source molecular beam epitaxy for the first time. It shows clear negative differential resistance (NDR) at 77 K, and the NDR peak current density agrees well with the value calculated using the conduction band offset (0.3...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1992-12, Vol.31 (12B), p.L1733-L1735
Hauptverfasser:	KAWAMURA, Y, IWAMURA, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	An InP/InAlAs double-barrier resonant tunneling diode (DB-RTD) is grown by gas source molecular beam epitaxy for the first time. It shows clear negative differential resistance (NDR) at 77 K, and the NDR peak current density agrees well with the value calculated using the conduction band offset (0.35 eV), which is determined from the intersubband absorption measurement. A pseudomorphic InP/AlAs DB-RTD is also fabricated, which shows clear NDR at room temperature.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.31.l1733