High-Power, 790 nm, Eight-Beam AlGaAs Laser Array with a Monitoring Photodiode
A high-power, 790 nm, eight-beam individually addressable AlGaAs laser array on 50 µm centers with a monitoring photodiode has been developed for high-speed data transfer in optical memory systems. The maximum output power of each element is over 80 mW. When eight elements are simultaneously operate...
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Veröffentlicht in: | Japanese Journal of Applied Physics 1992-02, Vol.31 (2S), p.508 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A high-power, 790 nm, eight-beam individually addressable AlGaAs laser array on 50 µm centers with a monitoring photodiode has been developed for high-speed data transfer in optical memory systems. The maximum output power of each element is over 80 mW. When eight elements are simultaneously operated at 20 mW in APC (Automatic Power Control) mode using the one-beam monitoring control, the total light output variation is less than 7% at a heatsink temperature between 10 and 50°C. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.31.508 |