EFFECT OF RF BIAS ON LOW-TEMPERATURE SYNTHESIS OF ALUMINUM NITRIDE FILM BY HOLLOW-CATHODE DISCHARGE-TYPE ION PLATING

The effects of RF bias potential on the synthesis of aluminium nitride (AlN) film on a glass substrate using the hollow cathode discharge (HCD) ion plating technique, and on some properties of the film were investigated. The deposits were characterized by X-ray diffraction and scanning electron microscopy. The AlN films prepared with application of RF bias potential were superior in flatness to those prepared without applying of RF bias potential, but excess RF bias voltage to the substrate caused the film to come off not just from the substrate, but also with peeling of the glass substrate surface. The Vickers microhardness of film consisting of AlN single phase was estimated to be about 2300 kg/mm2. The film density was increased by applying RF bias voltage, its value being close to the theoretical value.