Epitaxial Growth of TiO 2 -SnO 2 Solid Solution Film by Reactive Ion Beam Sputtering

Epitaxial thin film of rutile-type TiO 2 -SnO 2 solid solution has been successfully prepared. The film was fabricated on a sapphire (011̄2) substrate by the reactive ion beam sputtering method using a TiO 2 -SnO 2 ceramic target. The crystallinity of the film was dependent on the substrate temperature. The (101)-oriented film was grown at temperatures higher than 300°C. An epitaxial film was obtained by heat-treatment at temperatures higher than the miscibility gap.