Irradiation-temperature dependence of the light-induced effect in a-Si solar cells

The irradiation-temperature dependence of light-induced degradation has been studied at temperatures between 300 K and 25 K. Although Si-H 2 bonds have a strong influence on degradation at an irradiation temperature of 300 K, their influence is reduced at low irradiation temperatures. Si-H 2 bonds are thought to have a stabilization effect on newly created defects. Also, the hydrogen atom itself was found to have an influence on light-induced degradation in a-Si solar cells with low Si-H 2 bond density or in the region of low irradiation temperatures below about 60 K.