Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures

Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures

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Veröffentlicht in:Japanese Journal of Applied Physics 1991-05, Vol.30 (5A), p.L783-L785
Hauptverfasser: OSSART, P, BRASIL, M. J. S. P, CARDOSO, L. P, GANIERE, J. D, HORIUCHI, L, DECOBERT, J, SACILOTTI, M
Format: Artikel
Sprache:eng
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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container_title Japanese Journal of Applied Physics
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creator OSSART, P
BRASIL, M. J. S. P
CARDOSO, L. P
GANIERE, J. D
HORIUCHI, L
DECOBERT, J
SACILOTTI, M
description
doi_str_mv 10.1143/jjap.30.l783
format Article
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source Institute of Physics Journals
subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures
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