Large-area doping for poly-Si thin film transistors using bucket ion source with on RF plasma cathode

In order to realize stable processing of large-area ion doping, a filament-less bucket ion source with an rf plasma cathode (RFC) was studied and applied to the fabrication of poly crystalline Si thin film transistors (poly-Si TFTs). By using Ar as a discharge gas, the RFC can be utilized for the bu...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1991, Vol.30 (4B), p.L772-L774
Hauptverfasser:	KAWACHI, G, AOYAMA, T, SUZUKI, T, OHNO, Y, MIMURA, A, MOCHIZUKI, Y
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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