Large-area doping for poly-Si thin film transistors using bucket ion source with on RF plasma cathode

In order to realize stable processing of large-area ion doping, a filament-less bucket ion source with an rf plasma cathode (RFC) was studied and applied to the fabrication of poly crystalline Si thin film transistors (poly-Si TFTs). By using Ar as a discharge gas, the RFC can be utilized for the bucket ion source instead of a hot filament cathode (HFC). The throughput, uniformity of the sheet resistance and the characteristics of the fabricated TFTs were equivalent to those of a hot filament cathode type ion source. This technique seems applicable to the doping process of poly-Si TFTs.