A new interpretation of the orientation effect in GaAs metal semiconductor field effect transistors

This paper presents a new explanation of the orientation effect of self-aligned WSix gate GaAs MESFET's by taking the different channel-substrate interfaces formed in the [011] and [011̄] directions due to the piezoelectric charges in GaAs MESFET's into account. The predicted results are i...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1991, Vol.30 (1A), p.L11-L14
Hauptverfasser:	QING-AN HUANG, SHI-JI LU, QIN-YI TONG
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext
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