A new interpretation of the orientation effect in GaAs metal semiconductor field effect transistors

A new interpretation of the orientation effect in GaAs metal semiconductor field effect transistors

This paper presents a new explanation of the orientation effect of self-aligned WSix gate GaAs MESFET's by taking the different channel-substrate interfaces formed in the [011] and [011̄] directions due to the piezoelectric charges in GaAs MESFET's into account. The predicted results are i...

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Veröffentlicht in:Japanese Journal of Applied Physics 1991, Vol.30 (1A), p.L11-L14
Hauptverfasser: QING-AN HUANG, SHI-JI LU, QIN-YI TONG
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Zusammenfassung:This paper presents a new explanation of the orientation effect of self-aligned WSix gate GaAs MESFET's by taking the different channel-substrate interfaces formed in the [011] and [011̄] directions due to the piezoelectric charges in GaAs MESFET's into account. The predicted results are in agreement with the measurement data.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l11