Molecular beam epitaxially grown ZnSe(001) surface studied by the In situ observation of RHEED intensity

The desorption of Zn and Se atoms or molecules on the (001) surface of a ZnSe/GaAs epitaxial layer were studied by means of reflection high-energy electron diffraction (RHEED). The temporal behavior of the specular intensity observed from two azimuths, [110] and [1̄10], was well understood by taking the surface condition into consideration; i.e., the surface terrace is elongated toward the [1̄10] direction and excessively adsorbed Se molecules exsist as well. We also confirmed that a higher-energy electron beam enhances the desorption of Se molecules and adatoms.