Damage induced by electron cyclotron resonance plasma etching on silicon surface

Physical and electrical damage induced on silicon surfaces by electron cyclotron resonance (ECR) plasma etching is studied. In sulfurhexalluoride (SF 6 ) plasma etching, shallow (less than 750 Å) electrical damage is induced in the surface. Damage density increases markedly with the increase of microwave power. Deeper (1 µm) damage is formed when radio frequency (RF) bias power is added. This damage can be eliminated by annealing at 200°C. In Ar plasma etching, however, thin (∼80 Å) physical damage is induced.