Preparation of C-axis-oriented PLT thin films by the metalorganic chemical vapor deposition method

La-modified lead titanate (PLT) thin films are prepared by the metalorganic chemical vapor deposition method. Tetraethyl lead, titanium tetraisopropoxide and trisdipivaloylmethanato lanthanum are used as source materials. The films obtained at 600°C under reduced pressure of 6 Torr constitute PLT of the single perovskite phase, and highly c -axis-oriented films are grown on MgO(100). The crystal structures are transferred from the tetragonal to the cubic structure with increasing molar fraction of La 2 O 3 . The dielectric constant and tan δ are around 800 to 2700 and 0.04 to 0.1.