Fine pattern formation of gallium arsenide by in situ electron-beam lithography using an ultrathin surface oxide as a resist

Formation of fine patterns such as lines and spots on a GaAs surface by in situ electron beam (EB) lithography is demonstrated. An ultrathin surface oxide (

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Bibliographische Detailangaben
Veröffentlicht in:	Japanese Journal of Applied Physics 1990, Vol.29 (1), p.L182-L184
Hauptverfasser:	TANEYA, M, SUGIMOTO, Y, HIDAKA, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Formation of fine patterns such as lines and spots on a GaAs surface by in situ electron beam (EB) lithography is demonstrated. An ultrathin surface oxide (
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.29.l182