Ta film properties for X-ray mask absorbers

The properties of absorber materials for X-ray masks which can be patterned by a subtractive process are investigated. Highly pure film can be deposited using Xe rather than Ar as a working gas of RF sputtering. The stress of the Ta film can be controlled more precisely than either Re or W. Ta film...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1990-11, Vol.29 (11), p.2616-2619
Hauptverfasser:	ODA, M, OZAWA, A, OHKI, S, YOSHIHARA, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	The properties of absorber materials for X-ray masks which can be patterned by a subtractive process are investigated. Highly pure film can be deposited using Xe rather than Ar as a working gas of RF sputtering. The stress of the Ta film can be controlled more precisely than either Re or W. Ta film deposited by RF sputtering is highly oriented, and has a high purity and a high density. Furthermore, its stress does not change even after annealing at 400°C.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.29.2616