Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs

Polarization characteristics for excitonic luminescence lines of epitaxially grown ZnSe on GaAs demonstrate the splitting of the neutral donor-bound exciton as well as the free exciton due to the residual strain in the epilayer. The strain is interpreted well by the misfit of the calculated lattice...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1990-08, Vol.29 (8), p.1504-1505
Hauptverfasser:	OHISHI, M, SAITO, H, FUJIWARA, J.-I, OHMORI, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
Online-Zugang:	Volltext
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