Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs

Polarization characteristics for excitonic luminescence lines of epitaxially grown ZnSe on GaAs demonstrate the splitting of the neutral donor-bound exciton as well as the free exciton due to the residual strain in the epilayer. The strain is interpreted well by the misfit of the calculated lattice...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1990-08, Vol.29 (8), p.1504-1505
Hauptverfasser:	OHISHI, M, SAITO, H, FUJIWARA, J.-I, OHMORI, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
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Zusammenfassung:	Polarization characteristics for excitonic luminescence lines of epitaxially grown ZnSe on GaAs demonstrate the splitting of the neutral donor-bound exciton as well as the free exciton due to the residual strain in the epilayer. The strain is interpreted well by the misfit of the calculated lattice constants between ZnSe and GaAs.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.29.1504