Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs
Polarization characteristics for excitonic luminescence lines of epitaxially grown ZnSe on GaAs demonstrate the splitting of the neutral donor-bound exciton as well as the free exciton due to the residual strain in the epilayer. The strain is interpreted well by the misfit of the calculated lattice...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1990-08, Vol.29 (8), p.1504-1505 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1505 |
|---|---|
| container_issue | 8 |
| container_start_page | 1504 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 29 |
| creator | OHISHI, M SAITO, H FUJIWARA, J.-I OHMORI, K |
| description | Polarization characteristics for excitonic luminescence lines of epitaxially grown ZnSe on GaAs demonstrate the splitting of the neutral donor-bound exciton as well as the free exciton due to the residual strain in the epilayer. The strain is interpreted well by the misfit of the calculated lattice constants between ZnSe and GaAs. |
| doi_str_mv | 10.1143/jjap.29.1504 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1143_JJAP_29_1504</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>19302596</sourcerecordid><originalsourceid>FETCH-LOGICAL-c360t-f7b9fc54849b069ef57fadd4ea107615cf165915cba8f24d32d7b0e54dc7e7eb3</originalsourceid><addsrcrecordid>eNpFkEFLwzAcxYMoOKc3P0Au3uyWpEm7HMeY0zFQUC9eSpr-MzOytCQZbt_elgme3nvwe-_wELqnZEIpz6e7neomTE6oIPwCjWjOy4yTQlyiESGMZlwydo1uYtz1sRCcjpBdGgM64dbgANE2B-VwTEFZj1uP0zfg2DmbkvXbgYGjtqn1VmN32FsPUYPXgN1gcd-BziZ1tMq5E96G9sfjL_8O05Wax1t0ZZSLcPenY_T5tPxYPGeb19XLYr7JdF6QlJmylkYLPuOyJoUEI0qjmoaDoqQsqNCGFkL2WquZYbzJWVPWBARvdAkl1PkYPZ53dWhjDGCqLti9CqeKkmq4qVqv528Vk9VwU48_nPFORa2cCcprG_87MidMyCL_BT5tajw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>OHISHI, M ; SAITO, H ; FUJIWARA, J.-I ; OHMORI, K</creator><creatorcontrib>OHISHI, M ; SAITO, H ; FUJIWARA, J.-I ; OHMORI, K</creatorcontrib><description>Polarization characteristics for excitonic luminescence lines of epitaxially grown ZnSe on GaAs demonstrate the splitting of the neutral donor-bound exciton as well as the free exciton due to the residual strain in the epilayer. The strain is interpreted well by the misfit of the calculated lattice constants between ZnSe and GaAs.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/jjap.29.1504</identifier><identifier>CODEN: JJAPA5</identifier><language>eng</language><publisher>Tokyo: Japanese journal of applied physics</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics</subject><ispartof>Japanese Journal of Applied Physics, 1990-08, Vol.29 (8), p.1504-1505</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-f7b9fc54849b069ef57fadd4ea107615cf165915cba8f24d32d7b0e54dc7e7eb3</citedby><cites>FETCH-LOGICAL-c360t-f7b9fc54849b069ef57fadd4ea107615cf165915cba8f24d32d7b0e54dc7e7eb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19302596$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>OHISHI, M</creatorcontrib><creatorcontrib>SAITO, H</creatorcontrib><creatorcontrib>FUJIWARA, J.-I</creatorcontrib><creatorcontrib>OHMORI, K</creatorcontrib><title>Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs</title><title>Japanese Journal of Applied Physics</title><description>Polarization characteristics for excitonic luminescence lines of epitaxially grown ZnSe on GaAs demonstrate the splitting of the neutral donor-bound exciton as well as the free exciton due to the residual strain in the epilayer. The strain is interpreted well by the misfit of the calculated lattice constants between ZnSe and GaAs.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpFkEFLwzAcxYMoOKc3P0Au3uyWpEm7HMeY0zFQUC9eSpr-MzOytCQZbt_elgme3nvwe-_wELqnZEIpz6e7neomTE6oIPwCjWjOy4yTQlyiESGMZlwydo1uYtz1sRCcjpBdGgM64dbgANE2B-VwTEFZj1uP0zfg2DmbkvXbgYGjtqn1VmN32FsPUYPXgN1gcd-BziZ1tMq5E96G9sfjL_8O05Wax1t0ZZSLcPenY_T5tPxYPGeb19XLYr7JdF6QlJmylkYLPuOyJoUEI0qjmoaDoqQsqNCGFkL2WquZYbzJWVPWBARvdAkl1PkYPZ53dWhjDGCqLti9CqeKkmq4qVqv528Vk9VwU48_nPFORa2cCcprG_87MidMyCL_BT5tajw</recordid><startdate>19900801</startdate><enddate>19900801</enddate><creator>OHISHI, M</creator><creator>SAITO, H</creator><creator>FUJIWARA, J.-I</creator><creator>OHMORI, K</creator><general>Japanese journal of applied physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19900801</creationdate><title>Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs</title><author>OHISHI, M ; SAITO, H ; FUJIWARA, J.-I ; OHMORI, K</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c360t-f7b9fc54849b069ef57fadd4ea107615cf165915cba8f24d32d7b0e54dc7e7eb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>OHISHI, M</creatorcontrib><creatorcontrib>SAITO, H</creatorcontrib><creatorcontrib>FUJIWARA, J.-I</creatorcontrib><creatorcontrib>OHMORI, K</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>OHISHI, M</au><au>SAITO, H</au><au>FUJIWARA, J.-I</au><au>OHMORI, K</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1990-08-01</date><risdate>1990</risdate><volume>29</volume><issue>8</issue><spage>1504</spage><epage>1505</epage><pages>1504-1505</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPA5</coden><abstract>Polarization characteristics for excitonic luminescence lines of epitaxially grown ZnSe on GaAs demonstrate the splitting of the neutral donor-bound exciton as well as the free exciton due to the residual strain in the epilayer. The strain is interpreted well by the misfit of the calculated lattice constants between ZnSe and GaAs.</abstract><cop>Tokyo</cop><pub>Japanese journal of applied physics</pub><doi>10.1143/jjap.29.1504</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1990-08, Vol.29 (8), p.1504-1505 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_29_1504 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics |
| title | Effect of residual strain on the splitting of excitonic luminescence lines in epitaxially grown ZnSe/GaAs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T16%3A01%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20residual%20strain%20on%20the%20splitting%20of%20excitonic%20luminescence%20lines%20in%20epitaxially%20grown%20ZnSe/GaAs&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=OHISHI,%20M&rft.date=1990-08-01&rft.volume=29&rft.issue=8&rft.spage=1504&rft.epage=1505&rft.pages=1504-1505&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPA5&rft_id=info:doi/10.1143/jjap.29.1504&rft_dat=%3Cpascalfrancis_cross%3E19302596%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |