High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes

We have fabricated a high quantum efficiency (40%/facet), low internal loss (5 cm -1 ), high output power (62 mW/facet) 1.3 µm GaInAsP buried graded-index separate-confinement-heterostructure multiple quantum well (GRIN-SCH-MQW) laser diode entirely grown by metalorganic chemical vapor deposition (M...

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Veröffentlicht in:Japanese Journal of Applied Physics 1989-04, Vol.28 (4A), p.L661
Hauptverfasser: Kasukawa, Akihiko, Murgatroyd, Ian John, Imajo, Yoshihiro, Matsumoto, Narihito, Fukushima, Toru, Okamoto, Hiroshi, Kashiwa, Susumu
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:We have fabricated a high quantum efficiency (40%/facet), low internal loss (5 cm -1 ), high output power (62 mW/facet) 1.3 µm GaInAsP buried graded-index separate-confinement-heterostructure multiple quantum well (GRIN-SCH-MQW) laser diode entirely grown by metalorganic chemical vapor deposition (MOCVD). This laser diode operated in a single longitudinal mode in a relatively wide temperature range of 35°C without any mode hopping. The minimum spectral linewidth of 2.3 MHz was realized at an output power of 7 mW for a laser diode with cavity length of 900 µm. The beam divergence angle is considerably smaller than that of the conventional DH laser diodes.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.28.L661