GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System

GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System

GaAs (001) single-domain and high-quality layers are obtained on slightly misoriented Si (001)-on-sapphire (01̄12) substrates by using a new MOCVD system specifically designed for GaAs-on-Si growth. The X-ray FWHM of 10 µm-thick GaAs is reduced from 140 arcsec to 65 arcsec by thermal cycle annealing...

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Veröffentlicht in:Japanese Journal of Applied Physics 1989-10, Vol.28 (10A), p.L1696
Hauptverfasser: Nishimura, Takashi, Kadoiwa, Kaoru, Hayafuji, Norio, Murotani, Toshio, Ibuki, Sumiaki
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container_issue 10A
container_start_page L1696
container_title Japanese Journal of Applied Physics
container_volume 28
creator Nishimura, Takashi
Kadoiwa, Kaoru
Hayafuji, Norio
Murotani, Toshio
Ibuki, Sumiaki
description GaAs (001) single-domain and high-quality layers are obtained on slightly misoriented Si (001)-on-sapphire (01̄12) substrates by using a new MOCVD system specifically designed for GaAs-on-Si growth. The X-ray FWHM of 10 µm-thick GaAs is reduced from 140 arcsec to 65 arcsec by thermal cycle annealing. A crack-free 15 µm-thick GaAs layer with a dislocation density of 3×10 6 cm -2 is obtained by combining the thermal cycle annealing and the strained-layer superlattices.
doi_str_mv 10.1143/JJAP.28.L1696
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title GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System
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