GaAs(001) Epitaxial Layer on SOS Using a Specifically Designed MOCVD System
GaAs (001) single-domain and high-quality layers are obtained on slightly misoriented Si (001)-on-sapphire (01̄12) substrates by using a new MOCVD system specifically designed for GaAs-on-Si growth. The X-ray FWHM of 10 µm-thick GaAs is reduced from 140 arcsec to 65 arcsec by thermal cycle annealing...
Gespeichert in:
| Veröffentlicht in: | Japanese Journal of Applied Physics 1989-10, Vol.28 (10A), p.L1696 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | GaAs (001) single-domain and high-quality layers are obtained on slightly misoriented Si (001)-on-sapphire (01̄12) substrates by using a new MOCVD system specifically designed for GaAs-on-Si growth. The X-ray FWHM of 10 µm-thick GaAs is reduced from 140 arcsec to 65 arcsec by thermal cycle annealing. A crack-free 15 µm-thick GaAs layer with a dislocation density of 3×10
6
cm
-2
is obtained by combining the thermal cycle annealing and the strained-layer superlattices. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.28.L1696 |