The breakover condition for the PNPN structure

In this work, the breakover condition of the Shockley diode by the voltage triggering is studied. By replacing the current gain and the multiplication factor with their ac counterparts, an elegant definition of the breakover condition is presented and justified to be more general than previous defin...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1989-02, Vol.28 (2), p.L169-L172
1. Verfasser:	CHANG, D. C. Y
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Other multijunction devices. Power transistors. Thyristors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	In this work, the breakover condition of the Shockley diode by the voltage triggering is studied. By replacing the current gain and the multiplication factor with their ac counterparts, an elegant definition of the breakover condition is presented and justified to be more general than previous definitions.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.28.l169