Reactive ion beam etching using a selective gallium doping method

A maskless process has been realized by combining reactive ion beam etching (RIBE) with focused ion beam (FIB) technology. Si patterns of 0.3 µm with no undercutting can be obtained using RIBE with electron cyclotron resonance (ECR) plasma. A Ga compound is formed as an in situ etching mask.

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Bibliographische Detailangaben
Veröffentlicht in:	Japanese Journal of Applied Physics 1989-09, Vol.28 (9), p.L1671-L1672
Hauptverfasser:	NISHIOKA, K, MORIMOTO, H, MASHIKO, Y, KATO, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Mechanical and acoustical properties adhesion Physics Solid surfaces and solid-solid interfaces Solid-fluid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	A maskless process has been realized by combining reactive ion beam etching (RIBE) with focused ion beam (FIB) technology. Si patterns of 0.3 µm with no undercutting can be obtained using RIBE with electron cyclotron resonance (ECR) plasma. A Ga compound is formed as an in situ etching mask.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.28.l1671