InGaAsP/InP lasers with two reactive-ion-etched mirror facets

InGaAsP/InP lasers with two reactive-ion-etched mirror facets

Reactive ion etching in chlorine, methane, argon and hydrogen was used to etch smooth vertical mirror facets on both sides of InGaAsP/InP lasers. Optical measurements and lifetests show these lasers to have the same characteristics as lasers with cleaved facets.

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Veröffentlicht in:Japanese Journal of Applied Physics 1989, Vol.28 (7), p.L1236-L1238
Hauptverfasser: VAN GURP, G. J, JACOBS, J. M, BINSMA, J. J. M, TIEMEIJER, L. F
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Zusammenfassung:Reactive ion etching in chlorine, methane, argon and hydrogen was used to etch smooth vertical mirror facets on both sides of InGaAsP/InP lasers. Optical measurements and lifetests show these lasers to have the same characteristics as lasers with cleaved facets.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.28.L1236