CPAA study on carbon, boron and oxygen in LEC-GaAs

Carbon, boron and oxygen in liquid-encapsulated Czochralski(LEC) semi-insulating GaAs crystals grown in three different ambiences (Ar, Ar+1% O 2 , and Ar+1% CO) were analyzed by charged particle activation analysis (CPAA) using the 12 C(d, n) 13 N, nat B(d, xn) 11 C, and 16 O( 3 He, p) 18 F reaction...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1989-02, Vol.28 (2), p.210-211
Hauptverfasser:	ITOH, Y, KADOTA, Y, NOZAKI, T, FUKUSHIMA, H, TAKEDA, K
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics
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Beschreibung
Zusammenfassung:	Carbon, boron and oxygen in liquid-encapsulated Czochralski(LEC) semi-insulating GaAs crystals grown in three different ambiences (Ar, Ar+1% O 2 , and Ar+1% CO) were analyzed by charged particle activation analysis (CPAA) using the 12 C(d, n) 13 N, nat B(d, xn) 11 C, and 16 O( 3 He, p) 18 F reactions. An addition of 1% O 2 or CO gas to a conventional Ar ambience during crystal growth was found to increase C contamination by a factor of up to 35 (1.8× 10 16 cm -3 ), while B and O concentrations remained unchanged for the most part.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.28.210