Contact lithography modelling using statistical experimental designs

A Statistical Experimental Design Methodology has been applied to contact lithography modelling for GaAs technology. The AZ 4000 resists have been used with three thicknesses 1, 2 and 3 µm. A standard process with UV4 and UV3 exposures and a post exposure bake process with UV4 exposure have been mod...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1989-09, Vol.28 (9), p.1564-1577
Hauptverfasser:	POMMEREAU, F, IOST, M, RABINZOHN, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	A Statistical Experimental Design Methodology has been applied to contact lithography modelling for GaAs technology. The AZ 4000 resists have been used with three thicknesses 1, 2 and 3 µm. A standard process with UV4 and UV3 exposures and a post exposure bake process with UV4 exposure have been modelled. Two optimisations of the UV4 process leading to vertical profiles and an optimization of the PEB process leading to a lift-off profile are presented.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.28.1564