Image analysis of EL2 distributions in LEC GaAs Si materials

In a recent paper we showed that EL2 centers are not especially concentrated on dislocations as is the usual stated opinion. Photoquenching experiments and the analysis of infrared transmission images enable the identification of the local EL2° contribution in the cell pattern; a profile of the calculated EL2° quenched center densities was deduced showing a lower density in the walls and a higher density in an intermediate zone surrounding the inner cell. In this letter we propose a confirmation of this schematic distribution by extending the calculation to the complete image. A quantitative image of the EL2° densities is presented. A discussion is introduced which compares this new point of view with previous results reported in the literature, especially the conclusions on infrared luminescence images.