Microwave Behaviour of Bi 2 O 3 , TiO 2 and γ-Fe 2 O 3 Thick Film Overlays on Microstrip Rejection Filter
The paper reports the preliminary studies on the effect of thick film overlays of Bi 2 O 3 , TiO 2 and γ-Fe 2 O 3 materials on microstrip rejection filters. Variation of resonant frequency and quality factor of the rejection filter with overlay thickness are studied. It is observed that resonant rej...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1988-11, Vol.27 (11R), p.2168 |
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| Sprache: | eng |
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| container_issue | 11R |
| container_start_page | 2168 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 27 |
| creator | Joshi, A. M. Mandhre, M. M. Jadhav, M. L. Gangal, S. A. Karekar, R. N. |
| description | The paper reports the preliminary studies on the effect of thick film overlays of Bi
2
O
3
, TiO
2
and γ-Fe
2
O
3
materials on microstrip rejection filters. Variation of resonant frequency and quality factor of the rejection filter with overlay thickness are studied. It is observed that resonant rejection frequency and quality factor decrease smoothly with increase in the overlay thickness for Bi
2
O
3
& TiO
2
with logarithmic relation; but for γ-Fe
2
O
3
after a particular thickness, resonant rejection abruptly disappears and its variation is slightly orientation dependent. |
| doi_str_mv | 10.1143/JJAP.27.2168 |
| format | Article |
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2
O
3
, TiO
2
and γ-Fe
2
O
3
materials on microstrip rejection filters. Variation of resonant frequency and quality factor of the rejection filter with overlay thickness are studied. It is observed that resonant rejection frequency and quality factor decrease smoothly with increase in the overlay thickness for Bi
2
O
3
& TiO
2
with logarithmic relation; but for γ-Fe
2
O
3
after a particular thickness, resonant rejection abruptly disappears and its variation is slightly orientation dependent.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.1143/JJAP.27.2168</identifier><language>eng</language><ispartof>Japanese Journal of Applied Physics, 1988-11, Vol.27 (11R), p.2168</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c808-55cfbd3bdac4d8b720d292f1b3d538565634ad64b4e1dc16de1a5ae4a368a6803</citedby><cites>FETCH-LOGICAL-c808-55cfbd3bdac4d8b720d292f1b3d538565634ad64b4e1dc16de1a5ae4a368a6803</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Joshi, A. M.</creatorcontrib><creatorcontrib>Mandhre, M. M.</creatorcontrib><creatorcontrib>Jadhav, M. L.</creatorcontrib><creatorcontrib>Gangal, S. A.</creatorcontrib><creatorcontrib>Karekar, R. N.</creatorcontrib><title>Microwave Behaviour of Bi 2 O 3 , TiO 2 and γ-Fe 2 O 3 Thick Film Overlays on Microstrip Rejection Filter</title><title>Japanese Journal of Applied Physics</title><description>The paper reports the preliminary studies on the effect of thick film overlays of Bi
2
O
3
, TiO
2
and γ-Fe
2
O
3
materials on microstrip rejection filters. Variation of resonant frequency and quality factor of the rejection filter with overlay thickness are studied. It is observed that resonant rejection frequency and quality factor decrease smoothly with increase in the overlay thickness for Bi
2
O
3
& TiO
2
with logarithmic relation; but for γ-Fe
2
O
3
after a particular thickness, resonant rejection abruptly disappears and its variation is slightly orientation dependent.</description><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNotkE1OwzAUhC0EEqGw4wDvAE3xf9xlWxGgKgpC2VuO7aguaVM5pajn4h6ciQS6evNGo9HoQ-ie4AkhnD0sl7O3Cc0mlEh1gRLCeJZyLMUlSjCmJOVTSq_RTddt-lcKThK0eQ02tl_m6GHu1-YY2s8IbQ3zABQKYDCGMhS9NjsHP99p7s9-uQ72A_LQbKE4-tiYUwftDv7qukMMe3j3G28PoTf71MHHW3RVm6bzd-c7QmX-WC6e01Xx9LKYrVKrsEqFsHXlWOWM5U5VGcWOTmlNKuYEU0IKybhxklfcE2eJdJ4YYTw3TCojFWYjNP6vHYZ00dd6H8PWxJMmWA-Y9IBJ00wPmNgvr4dY0A</recordid><startdate>19881101</startdate><enddate>19881101</enddate><creator>Joshi, A. M.</creator><creator>Mandhre, M. M.</creator><creator>Jadhav, M. L.</creator><creator>Gangal, S. A.</creator><creator>Karekar, R. N.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19881101</creationdate><title>Microwave Behaviour of Bi 2 O 3 , TiO 2 and γ-Fe 2 O 3 Thick Film Overlays on Microstrip Rejection Filter</title><author>Joshi, A. M. ; Mandhre, M. M. ; Jadhav, M. L. ; Gangal, S. A. ; Karekar, R. N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c808-55cfbd3bdac4d8b720d292f1b3d538565634ad64b4e1dc16de1a5ae4a368a6803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Joshi, A. M.</creatorcontrib><creatorcontrib>Mandhre, M. M.</creatorcontrib><creatorcontrib>Jadhav, M. L.</creatorcontrib><creatorcontrib>Gangal, S. A.</creatorcontrib><creatorcontrib>Karekar, R. N.</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Joshi, A. M.</au><au>Mandhre, M. M.</au><au>Jadhav, M. L.</au><au>Gangal, S. A.</au><au>Karekar, R. N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microwave Behaviour of Bi 2 O 3 , TiO 2 and γ-Fe 2 O 3 Thick Film Overlays on Microstrip Rejection Filter</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>1988-11-01</date><risdate>1988</risdate><volume>27</volume><issue>11R</issue><spage>2168</spage><pages>2168-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The paper reports the preliminary studies on the effect of thick film overlays of Bi
2
O
3
, TiO
2
and γ-Fe
2
O
3
materials on microstrip rejection filters. Variation of resonant frequency and quality factor of the rejection filter with overlay thickness are studied. It is observed that resonant rejection frequency and quality factor decrease smoothly with increase in the overlay thickness for Bi
2
O
3
& TiO
2
with logarithmic relation; but for γ-Fe
2
O
3
after a particular thickness, resonant rejection abruptly disappears and its variation is slightly orientation dependent.</abstract><doi>10.1143/JJAP.27.2168</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 1988-11, Vol.27 (11R), p.2168 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_crossref_primary_10_1143_JJAP_27_2168 |
| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Microwave Behaviour of Bi 2 O 3 , TiO 2 and γ-Fe 2 O 3 Thick Film Overlays on Microstrip Rejection Filter |
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