Compositional disordering of focused-Si-implanted GaAs/AlGaAs superlattices by rapid thermal annealing

Compositional disordering of focused-Si-implanted GaAs/Al 0.5 Ga 0.5 As superlattices, followed by rapid thermal annealing (RTA), was investigated by means of sputtering Auger electron spectroscopy (AES) and Raman spectroscopy. Complete disordering was found to take place in the superlattices focused-Si-implanted with a dose of 5×10 15 cm -2 and annealed at 1000°C for 4 to 30 seconds, resulting in an Al 0.25 Ga 0.75 As alloy. The Raman spectra showed that this alloy had a higher quality as the implanted samples were annealed for longer periods of time.