Characteristics of the hydrogenated amorphous silicon-crystalline cadmium telluride heterojunction diode

Characteristics of the hydrogenated amorphous silicon-crystalline cadmium telluride heterojunction diode

The current-voltage characteristics and visible and X-ray photocurrent characteristics have been investigated for a heterojunction diode constructed of plasma-deposited hydrogenated amorphous silicon (a-Si:H) and single crystal cadmium telluride (c-CdTe). Devices showed low reverse bias saturation c...

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Veröffentlicht in:Japanese Journal of Applied Physics 1987-11, Vol.26 (11), p.L1812-L1814
Hauptverfasser: MEIKLE, S. G, HATANAKA, Y
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Sprache:eng
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Applied sciences
Exact sciences and technology
Other techniques and industries
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container_end_page L1814
container_issue 11
container_start_page L1812
container_title Japanese Journal of Applied Physics
container_volume 26
creator MEIKLE, S. G
HATANAKA, Y
description The current-voltage characteristics and visible and X-ray photocurrent characteristics have been investigated for a heterojunction diode constructed of plasma-deposited hydrogenated amorphous silicon (a-Si:H) and single crystal cadmium telluride (c-CdTe). Devices showed low reverse bias saturation current, a photoresponse spectrum ranging from approximately 400-800 nm and a 3 decade increase in reverse bias saturation current when exposed to 40 keV X-rays.
doi_str_mv 10.1143/jjap.26.l1812
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ispartof Japanese Journal of Applied Physics, 1987-11, Vol.26 (11), p.L1812-L1814
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language eng
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
subjects Applied sciences
Exact sciences and technology
Other techniques and industries
title Characteristics of the hydrogenated amorphous silicon-crystalline cadmium telluride heterojunction diode
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