Characteristics of the hydrogenated amorphous silicon-crystalline cadmium telluride heterojunction diode

The current-voltage characteristics and visible and X-ray photocurrent characteristics have been investigated for a heterojunction diode constructed of plasma-deposited hydrogenated amorphous silicon (a-Si:H) and single crystal cadmium telluride (c-CdTe). Devices showed low reverse bias saturation current, a photoresponse spectrum ranging from approximately 400-800 nm and a 3 decade increase in reverse bias saturation current when exposed to 40 keV X-rays.