Electric field induced reflection in GaInAsP/InP MQW structure

Reflection of light due to the electric field effect was seen for the first time in GaInAsP/InP MQW structures through the observation of an interference pattern between the transmitted and reflected light; this was caused by a change in the refractive index and absorption coefficient in the MQW layers due to the partial application of an electric field to the MQW layers. The observed data were fitted with the theoretical simulations and the refractive index change was predicted to be about 0.025% at -5 V. This is a promising step towards the realization of the intersectional optical switch.