Nanometer patterning by focused low energy electron beam lithography

Focused low energy electron beam was applied for nanometerscale pattern delineation. A resist exposure with an electron energy less than 10 kV causes two problems, that is, a limited penetration depth and the scum formation due to charging-up effect. These problems were solved by using an electrical...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1987-07, Vol.26 (7), p.L1165-L1167
Hauptverfasser:	SUGITA, A, KAKUCHI, M, TAMAMURA, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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