Nanometer patterning by focused low energy electron beam lithography

Focused low energy electron beam was applied for nanometerscale pattern delineation. A resist exposure with an electron energy less than 10 kV causes two problems, that is, a limited penetration depth and the scum formation due to charging-up effect. These problems were solved by using an electrically conducting 2-layer resist system composed of thin top imaging layer of silicone containing resist and conducting CVD carbon film as a bottom resist. Nanometer patterning as fine as 40 nm can be delineated by very low energy electron exposure with no electron energy dissipation in a substrate layer.