Detection of EL2 in undoped LEC GaAs by a novel variation of photo-induced transient spectroscopy

A variation of Photo-Induced Transient Spectroscopy (PITS) is described. By elimination of charge exchange with the surface of semi-insulating GaAs, negative peaks in PITS spectra are suppressed. This allows the transient response of bulk EL2 centres to be detected by PITS in undoped LEC GaAs for th...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1987-08, Vol.26 (8), p.1388-1389
Hauptverfasser:	BLIGHT, S. R, PAGE, A. D, LADBROOKE, P. H, THOMAS, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Impurity and defect levels Physics
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Zusammenfassung:	A variation of Photo-Induced Transient Spectroscopy (PITS) is described. By elimination of charge exchange with the surface of semi-insulating GaAs, negative peaks in PITS spectra are suppressed. This allows the transient response of bulk EL2 centres to be detected by PITS in undoped LEC GaAs for the first time.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.26.1388