High Threshold Voltage Reproducibility for WSi/Al x Ga 1-x As/GaAs MIS-Like Heterostructure FET
A WSi gate Al x Ga 1- x As/GaAs MIS-like heterostructure FET was fabricated. The threshold voltage of this FET is independent of the Al x Ga 1- x As barrier-layer thickness in contrast with that of an HEMT. There is little variation in the threshold voltage (0.05 V) against a large change in the bar...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1986-06, Vol.25 (6R), p.928 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A WSi gate Al
x
Ga
1-
x
As/GaAs MIS-like heterostructure FET was fabricated. The threshold voltage of this FET is independent of the Al
x
Ga
1-
x
As barrier-layer thickness in contrast with that of an HEMT. There is little variation in the threshold voltage (0.05 V) against a large change in the barrier-layer thickness. This ensures a uniform threshold voltage as well as the reproducibility of this FET. |
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| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.25.928 |