A hole trap center related to the 2.361 eV bound exciton emission in ZnTe single crystals

The heat-treatment effects of ZnTe single crystals which contain a low concentration of Te inclusions were investigated by photoluminescence, optical-absorption and admittance spectra measurements. A correlation between the 2.361 eV bound exciton emission and hole traps located at 0.39 eV above the...

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Veröffentlicht in:	Japanese Journal of Applied Physics 1986-06, Vol.25 (6), p.910-911
Hauptverfasser:	TAKEDA, F, MATSUURA, K, KISHIDA, S, TSURUMI, I, HAMAGUCHI, C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
Online-Zugang:	Volltext
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Zusammenfassung:	The heat-treatment effects of ZnTe single crystals which contain a low concentration of Te inclusions were investigated by photoluminescence, optical-absorption and admittance spectra measurements. A correlation between the 2.361 eV bound exciton emission and hole traps located at 0.39 eV above the valence band is reported.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/jjap.25.910