Composition effect on CV profile and threshold voltage for MESFETs fabricated in undoped LEC SI GaAs

Composition effect on CV profile and threshold voltage for MESFETs fabricated in undoped LEC SI GaAs

A correlation between substrate composition and electrical properties was investigated for undoped LEC SI GaAs crystals. The concentration of residual carbon in a crystal, acting as an acceptor, was found to decrease as the As content increased for As-rich crystals. Consequently, donors in n-active...

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Veröffentlicht in:Japanese Journal of Applied Physics 1986-12, Vol.25 (12), p.1905-1907
Hauptverfasser: YASUAMI, S, FUKUTA, K, WATANABE, M, NAKANISI, T
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Zusammenfassung:A correlation between substrate composition and electrical properties was investigated for undoped LEC SI GaAs crystals. The concentration of residual carbon in a crystal, acting as an acceptor, was found to decrease as the As content increased for As-rich crystals. Consequently, donors in n-active layers were less compensated for and the absolute value of the threshold voltage for MESFETs became higher as the As fraction increased.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.25.1905