Cathodoluminescence Study on Diffusion Coefficients of Al, Ga and In in ZnSe
The temperature dependence on the diffusion coefficients of Al, Ga and In in ZnSe was studied. The cleavage cross-sectional surface of a diffused ZnSe wafer was observed by the cathodoluminescence mode of SEM. The following relations were obtained: D Al =1.18×10 -1 exp (-1.92 eV/ k T ), D Ga =6.76×1...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 1986-10, Vol.25 (10R), p.1610 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The temperature dependence on the diffusion coefficients of Al, Ga and In in ZnSe was studied. The cleavage cross-sectional surface of a diffused ZnSe wafer was observed by the cathodoluminescence mode of SEM. The following relations were obtained:
D
Al
=1.18×10
-1
exp
(-1.92 eV/
k
T
),
D
Ga
=6.76×10
-2
exp
(-1.80 eV/
k
T
) and
D
In
=4.45×10
-1
exp
(-1.84 eV/
k
T
). |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.25.1610 |